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igbt highspeed5fastigbtintrenchstop tm 5technology IGW50N65F5A 650vigbt highspeedswitchingseriesfifthgeneration datasheet industrialpowercontrol
2 IGW50N65F5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 highspeed5fastigbtintrenchstop tm 5technology featuresandbenefits: highspeedf5technologyoffering ?best-in-classefficiencyinhardswitchingandresonant topologies ?650vbreakdownvoltage ?lowgatechargeq g ?maximumjunctiontemperature175c ?qualifiedaccordingtoaec-q101 ?greenpackage(rohscompliant) ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?batterycharger ?dc/dcconverter packagepindefinition: ?pin1-gate ?pin2&backside-collector ?pin3-emitter keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IGW50N65F5A 650v 50a 1.66v 175c g50ef5a pg-to247-3 g c e 1 2 3
3 IGW50N65F5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 g c e 1 2 3
4 IGW50N65F5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 650 v dccollectorcurrent,limitedby t vjmax t c =25cvaluelimitedbybondwire t c =100c i c 80.0 53.5 a pulsedcollectorcurrent, t p limitedby t vjmax 1) i cpuls 150.0 a turn off safe operating area v ce 650v, t vj 175c, t p =1s 1) - 150.0 a gate-emitter voltage transientgate-emittervoltage( t p 10s,d<0.010) v ge 20 30 v powerdissipation t c =25c powerdissipation t c =100c p tot 270.0 136.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, 2) wave soldering 1.6mm (0.063in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, junction - case r th(j-c) 0.55 k/w thermal resistance junction - ambient r th(j-a) 40 k/w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.20ma 650 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =50.0a t vj =25c t vj =125c t vj =175c - - - 1.66 1.90 2.03 2.10 - - v gate-emitter threshold voltage v ge(th) i c =0.40ma, v ce = v ge 3.2 4.0 4.8 v zero gate voltage collector current i ces v ce =650v, v ge =0v t vj =25c t vj =175c - - - 600.0 40.0 - a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =50.0a - 62.0 - s 1) defined by design. not subject to production test. 2) package not recommended for surface mount applications g c e 1 2 3
5 IGW50N65F5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 2800 - output capacitance c oes - 51 - reverse transfer capacitance c res - 11 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =520v, i c =50.0a, v ge =15v - 108.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13.0 - nh switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 21 - ns rise time t r - 12 - ns turn-off delay time t d(off) - 156 - ns fall time t f - 6 - ns turn-on energy e on - 0.49 - mj turn-off energy e off - 0.14 - mj total switching energy e ts - 0.63 - mj t vj =25c, v cc =400v, i c =25.0a, v ge =0.0/15.0v, r g(on) =12.0 w , r g(off) =12.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. turn-on delay time t d(on) - 19 - ns rise time t r - 4 - ns turn-off delay time t d(off) - 173 - ns fall time t f - 10 - ns turn-on energy e on - 0.10 - mj turn-off energy e off - 0.03 - mj total switching energy e ts - 0.13 - mj t vj =25c, v cc =400v, i c =6.0a, v ge =0.0/15.0v, r g(on) =12.0 w , r g(off) =12.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e 1 2 3
6 IGW50N65F5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =150c turn-on delay time t d(on) - 21 - ns rise time t r - 14 - ns turn-off delay time t d(off) - 191 - ns fall time t f - 5 - ns turn-on energy e on - 0.68 - mj turn-off energy e off - 0.25 - mj total switching energy e ts - 0.93 - mj t vj =150c, v cc =400v, i c =25.0a, v ge =0.0/15.0v, r g(on) =12.0 w , r g(off) =12.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. turn-on delay time t d(on) - 18 - ns rise time t r - 5 - ns turn-off delay time t d(off) - 229 - ns fall time t f - 12 - ns turn-on energy e on - 0.18 - mj turn-off energy e off - 0.06 - mj total switching energy e ts - 0.24 - mj t vj =150c, v cc =400v, i c =6.0a, v ge =0.0/15.0v, r g(on) =12.0 w , r g(off) =12.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e 1 2 3
7 IGW50N65F5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 figure 1. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 30 60 90 120 150 180 210 240 270 figure 2. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 figure 3. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 15 30 45 60 75 90 105 120 135 150 v ge = 20v 18v 15v 12v 10v 8v 7v 6v 5v figure 4. typicaloutputcharacteristic ( t vj =150c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 15 30 45 60 75 90 105 120 135 150 v ge = 20v 18v 15v 12v 10v 8v 7v 6v 5v g c e 1 2 3
8 IGW50N65F5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 figure 5. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 4 5 6 7 8 9 0 15 30 45 60 75 90 105 120 135 150 t vj =25c t vj =150c figure 6. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 0 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i c =6.25a i c =12.5a i c =25a i c =50a figure 7. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, r g(on) =12 w , r g(off) =12 w ,dynamic test circuit in figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 30 60 90 120 150 1 10 100 1000 t d(off) t f t d(on) t r figure 8. typicalswitchingtimesasafunctionofgate resistance (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, i c =25a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] t ,switchingtimes[ns] 5 15 25 35 45 55 65 75 85 1 10 100 1000 t d(off) t f t d(on) t r g c e 1 2 3
9 IGW50N65F5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 figure 9. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =25a, r g(on) =12 w , r g(off) =12 w ,dynamictest circuit in figure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 1000 t d(off) t f t d(on) t r figure 10. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.4ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 0 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 typ. min. max. figure 11. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, r g(on) =12 w , r g(off) =12 w , dynamic test circuit in figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 30 60 90 120 150 0 1 2 3 4 5 6 7 8 9 10 11 e off e on e ts figure 12. typicalswitchingenergylossesasa functionofgateresistance (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, i c =25a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] e ,switchingenergylosses[mj] 5 15 25 35 45 55 65 75 85 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 e off e on e ts g c e 1 2 3
10 IGW50N65F5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 figure 13. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =25a, r g(on) =12 w , r g(off) =12 w ,dynamic test circuit in figure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =150c, v ge =0/15v, i c =25a, r g(on) =12 w , r g(off) =12 w ,dynamic test circuit in figure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 200 250 300 350 400 450 500 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 e off e on e ts figure 15. typicalgatecharge ( i c =50a) q g ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 v cc =130v v cc =520v figure 16. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 1 10 100 1000 1e+4 c ies c oes c res g c e 1 2 3
11 IGW50N65F5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 figure 17. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.026138 3.3e-5 2 0.118331 2.5e-4 3 0.159109 3.9e-3 4 0.181217 0.044084 5 0.065204 0.191225 g c e 1 2 3
12 IGW50N65F5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 g c e 1 2 3 pg-to247-3
13 IGW50N65F5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 g c e 1 2 3 pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce
14 IGW50N65F5A high speed switching series fifth generation rev. 2.1, 2015-01-15 revision history IGW50N65F5A previous revision revision date subjects (major changes since last revision) 2.1 2015-01-15 final data sheet g c e 1 2 3 pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce

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